Optically Active Centers in Er-Implanted Silicon
نویسندگان
چکیده
منابع مشابه
Microscopic structure of Er-related optically active centers in crystalline silicon.
A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as rega...
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Impurity atom cluster and nanocrystal formation in Er-implanted hexagonal SiC were studied using TEM and HAADF-STEM. Short interstitial loops were initially observed to form in the as-implanted layers. After annealing at 1600 degrees C extended matrix defects (wide interstitial loops and voids), Er atom clusters and nanocrystals grew. The wide interstitial loops act as strong sinks capturing di...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1995
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.88.877